Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias
Author:
Affiliation:
1. Fujitsu Limited, Atsugi, Kanagawa 243-0197, Japan
2. Fujitsu Laboratories Ltd., Atsugi, Kanagawa 243-0197, Japan
3. Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
Funder
Core Research for Evolutional Science and Technology
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0006061
Reference29 articles.
1. Ambient RF Energy-Harvesting Technologies for Self-Sustainable Standalone Wireless Sensor Platforms
2. Theoretical and experimental development of 10 and 35 GHz rectennas
3. Recycling Ambient Microwave Energy With Broad-Band Rectenna Arrays
4. E-WEHP: A Batteryless Embedded Sensor-Platform Wirelessly Powered From Ambient Digital-TV Signals
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1. Calibration‐Free and High‐Sensitivity Microwave Detectors Based on InAs/InP Nanowire Double Quantum Dots;Advanced Functional Materials;2023-02-28
2. III–V nanowire backward diodes with high sensitivity above 1 MV W−1 for low-power microwave energy harvesting;Japanese Journal of Applied Physics;2021-02-09
3. Spin–orbit torque rectifier for weak RF energy harvesting;Applied Physics Letters;2021-02-01
4. Recent advances and future prospects in energy harvesting technologies;Japanese Journal of Applied Physics;2020-10-23
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