InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors-Reference-Cited by-同舟云学术

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InAs/GaSb Heterostructure Nanowires for Tunnel Field-Effect Transistors

Published:2010-08-24 Issue:10 Volume:10 Page:4080-4085
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Borg B. Mattias¹,Dick Kimberly A.¹²,Ganjipour Bahram¹,Pistol Mats-Erik¹,Wernersson Lars-Erik¹³,Thelander Claes¹

Affiliation:

1. Division of Solid State Physics, Lund University, Box 118, SE-221 00, Lund, Sweden

2. Polymer and Materials Chemistry, Lund University, Box 124, SE-221 00, Lund, Sweden

3. Electrical and Information Technology, Lund University, Box 118, SE-221 00, Lund, Sweden

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl102145h

Reference31 articles.

1. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

2. Silicon nanowire tunneling field-effect transistors

3. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

4. Theory of Tunneling

5. Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs

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