Epitaxial growth of crystal phase quantum dots in III–V semiconductor nanowires-Reference-Cited by-同舟云学术

Epitaxial growth of crystal phase quantum dots in III–V semiconductor nanowires

Published:2023 Issue:7 Volume:5 Page:1890-1909
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Lozano Miguel Sinusia¹^ORCID,Gómez Víctor J.¹^ORCID

Affiliation:

1. Nanophotonics Technology Center, Universitat Politècnica de València, Camino de Vera, s/n Building 8F, 2a Floor, 46022 Valencia, Spain

Abstract

This review summarizes the epitaxial growth of crystal phase quantum dots in nanowires in terms of basic concepts, control of the crystal phase in the axial direction, shell growth in the radial direction and optical and electronic properties.

Funder

Generalitat Valenciana

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NA/D2NA00956K

Reference186 articles.

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3. A highly efficient single-photon source based on a quantum dot in a photonic nanowire

4. Dielectric GaAs Antenna Ensuring an Efficient Broadband Coupling between an InAs Quantum Dot and a Gaussian Optical Beam

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