InterMat: accelerating band offset prediction in semiconductor interfaces with DFT and deep learning-Reference-Cited by-同舟云学术

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InterMat: accelerating band offset prediction in semiconductor interfaces with DFT and deep learning

Published:2024 Issue:7 Volume:3 Page:1365-1377
ISSN:2635-098X
Container-title:Digital Discovery
language:en
Short-container-title:Digital Discovery

Author:

Choudhary Kamal¹^ORCID,Garrity Kevin F.¹

Affiliation:

1. Material Measurement Laboratory, National Institute of Standards and Technology, Maryland, 20899, USA

Abstract

We introduce a computational framework (InterMat) to predict band offsets of semiconductor interfaces using density functional theory (DFT) and graph neural networks (GNN).

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/DD/D4DD00031E

Reference108 articles.

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3. Heterostructure bipolar transistors and integrated circuits

4. W.Monch , Electronic properties of semiconductor interfaces , Springer Science & Business Media , 2013 , vol. 43

5. T. Y.Edward , J. O.McCaldin and T. C.McGill , Solid State Physics , Elsevier , 1992 , vol. 46 , pp. 1–146

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