Probing the nature of carrier localization in GaInNAs epilayers by optical methods-Reference-Cited by-同舟云学术

Probing the nature of carrier localization in GaInNAs epilayers by optical methods

Published:2013-07 Issue:1 Volume:103 Page:012104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Tsai Y.,Barman B.,Scrace T.,Lindberg G.,Fukuda M.,Whiteside V. R.,Keay J. C.,Johnson M. B.,Sellers I. R.,Al Khalfioui M.,Leroux M.,Weinstein B. A.,Petrou A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4813388

Reference24 articles.

1. 1-eV solar cells with GaInNAs active layer

2. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

3. III N V semiconductors for solar photovoltaic applications

4. An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

5. Charge separation and temperature-induced carrier migration in Ga1−xInxNyAs1−ymultiple quantum wells

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