An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells-Reference-Cited by-同舟云学术

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An approach to the formation mechanism of the composition fluctuation in GaInNAs quantum wells

Published:2005-09-19 Issue:10 Volume:20 Page:1096-1102
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Herrera M,González D,Lozano J G,Gutierrez M,García R,Hopkinson M,Liu H Y

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference60 articles.

1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance

2. GaInNAs: a novel material for long-wavelength semiconductor lasers

3. Room-Temperature Operation of GaInNAs/GaInP Double-Heterostructure Laser Diodes Grown by Metalorganic Chemical Vapor Deposition

4. Solubility of nitrogen in binary III–V systems

5. Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photoluminescence study of Be-acceptors in GaInNAs epilayers;Journal of Applied Physics;2015-01-28

2. Probing the nature of carrier localization in GaInNAs epilayers by optical methods;Applied Physics Letters;2013-07

3. Charge separation and temperature-induced carrier migration in Ga1−xInxNyAs1−ymultiple quantum wells;Physical Review B;2011-07-05

4. Morphological breakdown during growth of a high nitrogen content GaInNAs thin film;Surface Science;2006-08

5. Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells;Dilute III-V Nitride Semiconductors and Material Systems

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