Improved performance in GaInNAs solar cells by hydrogen passivation-Reference-Cited by-同舟云学术

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Improved performance in GaInNAs solar cells by hydrogen passivation

Published:2015-04-06 Issue:14 Volume:106 Page:141904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fukuda M.¹,Whiteside V. R.¹,Keay J. C.¹,Meleco A.¹,Sellers I. R.¹,Hossain K.²^ORCID,Golding T. D.²,Leroux M.³,Al Khalfioui M.³

Affiliation:

1. Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, 440 W. Brooks St., Norman, Oklahoma 73019, USA

2. Amethyst Research Inc., 123 Case Circle, Ardmore, Oklahoma 73401, USA

3. CRHEA-CNRS, Rue Bernard Gregory, Valbonne 06560, France

Funder

State of Oklahoma

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4916668

Reference21 articles.

1. Dilute nitride GaInNAs and GaInNAsSb solar cells by molecular beam epitaxy

2. III N V semiconductors for solar photovoltaic applications

3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

4. 43.5% efficient lattice matched solar cells

5. Solar cell efficiency tables (version 41)

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Radiation tolerance of GaAs1-xSbx solar cells: A candidate III-V system for space applications;2021 IEEE 48th Photovoltaic Specialists Conference (PVSC);2021-06-20

2. Research on monolithic AlGaInP/AlGaInAs/GaInAs/Ge quadruple-junction solar cell for high efficiency lattice-matched tandem photovoltaic device;Applied Physics Express;2020-06-17

3. Role of In in Hydrogenation of N-Related Complexes in GaInNAs;ACS Applied Electronic Materials;2019-03-22

4. The role of N-H complexes in the control of localized center recombination in hydrogenated GaInNAs (Conference Presentation);Physics, Simulation, and Photonic Engineering of Photovoltaic Devices VI;2017-04-19

5. The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device;Journal of Crystal Growth;2017-01

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