Intermediate range between N-doped GaP and GaP1-xNx alloys: difference in optical properties
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Luminescence quenching and the formation of the GaP1−xNxalloy in GaP with increasing nitrogen content
2. Heteroepitaxial Growth of GaN1-xPx($x\lesssim0.09$) on Sapphire Substrates
3. Metalorganic vapor phase epitaxy of GaP1−xNxalloys on GaP
4. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
5. Thermal quenching processes in the low temperature photoluminescence of excitons bound to nitrogen pairs in GaP
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1. Photocurrent enhancement by below bandgap excitation in GaPN;Japanese Journal of Applied Physics;2023-05-18
2. Detection of Nonradiative Recombination Centers in GaPN by Combining Two‐Wavelength Excited Photoluminescence and Time‐Resolved Photoluminescence;physica status solidi (b);2021-09-06
3. Spectral change of intermediate band luminescence in GaP:N due to below-gap excitation: Discrimination from thermal activation;physica status solidi (b);2016-11-15
4. Direct Evidence of Carrier Excitation from Intermediate Band States in GaPN by Two-Wavelength Excited Photoluminescence;Applied Physics Express;2013-09-01
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