Numerical Study of Strained GaAs1−xNx/GaAs Quantum-Well Laser
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://link.springer.com/content/pdf/10.1007/s42341-019-00123-9.pdf
Reference30 articles.
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2. H. Riechert, A. Ramakrishnan, G. Steinle, Development of InGaAsN-based 1.3 µm VCSELs. Semicond. Sci. Technol. 17, 892–897 (2002). https://doi.org/10.1088/0268-1242/17/8/318
3. A. Mereuta, G. Saint-Girons, S. Bouchoule, I. Sagnes, F. Alexandre, G. Le Roux, J. Decobert, A. Ougazzaden, (InGa)(NAs)/GaAs structures emitting in 1–1.6 µm wavelength range. Opt. Mater. 17, 185–188 (2001). https://doi.org/10.1016/s0925-3467(01)00079-9
4. A. Hasse, K. Volz, A.K. Schaper, J. Koch, F. Hohnsdorf, W. Stolz, TEM investigations of (Galn)(NAs)/GaAs multi-quantum wells grown by MOVPE. Crst. Res. Technol. (2000). https://doi.org/10.1002/1521-4079(200007)35:6/7%3c787:aid-crat787%3e3.0.co;2-s
5. M. Fischer, M. Reinhardt, A. Forchel, GaInAsN/GaAs laser diodes operating at 1.52 µm. Electron. Lett. 36, 1208–1209 (2000). https://doi.org/10.1049/el:20000870
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