Microscopic View of Defect Evolution in Thermal Treated AlGaInAs Quantum Well Revealed by Spatially Resolved Cathodoluminescence
Author:
Funder
National Natural Science Foundation of China
Publisher
MDPI AG
Subject
General Materials Science
Link
http://www.mdpi.com/1996-1944/11/6/1049/pdf
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5. Superior Temperature Performance of 1.3 ?m AlGaInAs-Based Semiconductor Lasers Investigated at High Pressure and Low Temperature
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1. Influence of atom segregation on the structure and luminescence of InGaAsSb/AlGaAsSb multiple quantum wells;Journal of Luminescence;2022-09
2. Carrier Dynamic Investigations of AlGaInAs Quantum Well Revealed by Temperature-Dependent Time-Resolved Photoluminescence;Materials;2020-09-23
3. Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells;Materials Research Bulletin;2019-07
4. Effect of the thermal annealing and the nominal composition in the elemental distribution of InxAl1-xAsySb1-y for triple junction solar cells;Journal of Alloys and Compounds;2019-07
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