Long-wavelength (λ≥ 1.3 µm) InGaAlAs-InP vertical-cavity surface-emitting lasers for applications in optical communication and sensing-Reference-Cited by-同舟云学术

Long-wavelength (λ≥ 1.3 µm) InGaAlAs-InP vertical-cavity surface-emitting lasers for applications in optical communication and sensing

Published:2006-11 Issue:14 Volume:203 Page:3538-3544
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Amann Markus-Christian,Ortsiefer Markus

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference10 articles.

1. Electrically pumped 10 Gbit∕s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region

2. E. Deichsel, A. Syrbu, A. Caliman, A. Mereuta, A. Mircea, G. Suruceanu, V. Iakovlev, C.-A. Berseth, J. Boucart, A. Rudra, and E. Kapon, Conference on Lasers and Electro-Optics (CLEO), San Francisco, CPDB7, 2004.

3. J. Tatum, European Conference on Optical Communication (ECOC), Stockholm, Mo3. 2, 2004.

4. Vertical-Cavity Surface-Emitting Lasers VIII;Shau;Proc. SPIE,2004

5. High-speed modulation up to 10 Gbit∕s with 1.55 [micro sign]m wavelength InGaAlAs VCSELs

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