8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference11 articles.
1. Power-efficient answer
2. 10-Gb/s data transmission using BCB passivated 1.55-/spl mu/m InGaAlAs-InP VCSELs
3. Monolithic vertical cavity device lasing at 1.55 [micro sign]m in InGaAlAs system
4. All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-/spl mu/m wavelength range for CWDM band applications
5. 10-Gb/s and 10-km error-free transmission up to 100°C with 13-μm wavelength wafer-fused VCSELs
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3. Photonic engineering of InP towards homoepitaxial short-wavelength infrared VCSELs;Optica;2024-01-18
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