Monolithic vertical cavity device lasing at 1.55 [micro sign]m in InGaAlAs system
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_19970568?crawler=true&mimetype=application/pdf
Reference14 articles.
1. Sale, T.E.: ‘Vertical cavity surface emitting lasers’, (Research Studies Press Ltd. 1995)
2. High reflectivity 1.55 μm InP/InGaAsP Bragg mirror grown by chemical beam epitaxy
3. High-reflectivity AlGaInAs/InP multilayer mirrors grown by low-pressure MOVPE for application to long-wavelength high-contrast-ratio multi-quantum-well modulators
4. Monolithically integrated InGaAlAs dielectric reflectors for vertical cavity optoelectronic devices
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