Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells-Reference-Cited by-同舟云学术

Temperature-dependent photoluminescence characterization of compressively strained AlGaInAs quantum wells

Published:2019-07 Issue: Volume:115 Page:196-200
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Song Yue,Zhang Ligong,Zeng Yugang,Chen Yongyi^ORCID,Qin Li,Zhou Yinli,Luo Yongshi,Zhao Haifeng,Ning Yongqiang,Wang Lijun

Funder

National Science and Technology Major Project of China

National Natural Science Foundation of China

Program of equipment development of Chinese Academy of sciences

Science and Technology Program of Jilin province

Frontier Science Key Program of President of the Chinese Academy of Sciences

Science and Technology Development Project of Jilin Province

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference35 articles.

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3. Effects of rapid thermal annealing on the optical properties of 1.3 μm InGaAlAs multiquantum wells grown by digital-alloy molecular-beam epitaxy;Song;J. Appl. Phys.,2002

4. Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates;Sirenko;J. Appl. Phys.,2005

5. Experimental analysis of temperature dependence in 1.3-μm AlGaInAs-InP strained MQW lasers;Higashi;IEEE J. Sel. Top. Quantum,1999

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