Optimum indium composition for (Ga,In)(N,As)∕GaAs quantum wells emitting beyond 1.5μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2180441
Reference25 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m
3. Active SAW devices on 2DEG heterostructures
4. Low threshold InGaAsN/GaAs lasers beyond 1500nm
5. Growth and in situ annealing conditions for long-wavelength (Ga, In)(N, As)/GaAs lasers
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1. Temperature dependence of the optical transitions in Ga0.64In0.36N0.046As0.954 multiquantum wells of various widths studied by photoreflectance;Journal of Applied Physics;2009-08
2. Emission characteristics improvement in structures with InAs/GaAsN/InGaAsN superlattices;Technical Physics Letters;2009-04
3. High‐brightness long‐wavelength semiconductor disk lasers;Laser & Photonics Review;2008-07-07
4. Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots;Semiconductor Science and Technology;2008-02-18
5. Effect of structural design on the optical properties of strain-compensated InAs/InGaAsN/GaAsN superlattices;Technical Physics Letters;2008-02
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