1. W. W. Chow and J. S. Harris, Jr., Appl. Phys. Lett. 82, 1673 (2003).
2. M. Kondow, K. Uomi, A. Niwa, et al., Jpn. J. Appl. Phys. (Part 1) 35, 1273 (1996).
3. H. Hugues, B. Damilano, J.-Y. Duboz, and J. Massies, Appl. Phys. Lett. 88, 091111 (2006).
4. H. Y. Liu, M. Hopkinson, and P. Navaretti, Appl. Phys. Lett. 83, 4951 (2003).
5. I. P. Soshnikov, N. V. Kryzhanovskaya, N. N. Ledentsov, A. Yu. Egorov, V. V. Mamutin, V. A. Odnoblyudov, V. M. Ustinov, O. M. Gorbenko, H. Kirmse, W. Neumann, and D. Bimberg, Fiz. Tekh. Poluprovodn. (St. Petersburg) 38, 354 (2004) [Semiconductors 38, 340 (2004)].