Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots-Reference-Cited by-同舟云学术

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Optimum annealing temperature versus nitrogen composition in InAs/(Ga, In) (N, As) quantum dots

Published:2008-02-18 Issue:3 Volume:23 Page:035020
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Hugues M,Damilano B,Khalfioui M Al,Duboz J-Y,Massies J,Richter M,Wieck A D

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Low threshold current density and negative characteristic temperature 1.3μm InAs self-assembled quantum dot lasers

2. Low threshold InGaAsN/GaAs lasers beyond 1500nm

3. Impact of N on the lasing characteristics of GaInNAs∕GaAs quantum well lasers emitting from 1.29 to 1.52μm

4. Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 [micro sign]m

5. Room-temperature continuous-wave 1.55 [micro sign]m GaInNAsSb laser on GaAs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Theoretical characteristics of 1.55μm InN based quantum dot laser;SPIE Proceedings;2013-09-26

2. Proposal of High Performance 1.55.MU.m Quantum Dot Heterostructure Laser Using InN;IEICE Transactions on Electronics;2012

3. A Novel Design of InN Based Quantum-Dot Laser Operating at 1.55 µm;Advanced Materials Research;2011-11

4. Electroluminescence analysis of 1.3-1.5 μm InAs quantum dot LEDs with (Ga,In)(N,As) capping layers;physica status solidi (c);2009-06

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