Impact of N on the lasing characteristics of GaInNAs∕GaAs quantum well lasers emitting from 1.29 to 1.52μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2151249
Reference15 articles.
1. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m
2. High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy
3. Low threshold InGaAsN/GaAs lasers beyond 1500nm
4. The opportunities, successes and challenges for GaInNAsSb
5. Room temperature performance of low threshold 1.34-1.44-/spl mu/m GaInNAs-GaAs quantum-well lasers grown by molecular beam epitaxy
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1. Ultra-broadband GaInNAs semiconductor optical amplifier incorporating N compositional fluctuations for the next generation passive optical network;SPIE Proceedings;2015-02-07
2. Effect of Relief Aperture on Single-Fundamental-Mode Emission of 1.3-$\mu $ m GaInNAs GaAs-Based VCSELs;IEEE Journal of Quantum Electronics;2014-11
3. Modeling Dilute Nitride 1.3 μm Quantum Well Lasers: Incorporation of N Compositional Fluctuations;IEEE Journal of Selected Topics in Quantum Electronics;2013-09
4. 6.1 Growth and preparation of quantum wells on GaAs substrates;Growth and Structuring;2013
5. Thermal dependence of the optical gain and threshold current density of GaInNAs/GaAs/AlGaAs quantum well lasers;Journal of Applied Physics;2011-12-15
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