Proposal of High Performance 1.55.MU.m Quantum Dot Heterostructure Laser Using InN-Reference-Cited by-同舟云学术

Proposal of High Performance 1.55.MU.m Quantum Dot Heterostructure Laser Using InN

Published:2012 Issue:2 Volume:E95-C Page:255-261
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

HOSSAIN Md. Mottaleb¹,HUMAYUN Md. Abdullah-AL¹,HASAN Md. Tanvir¹,BHUIYAN Ashraful Ghani¹²,HASHIMOTO Akihiro²,YAMAMOTO Akio²

Affiliation:

1. Dept. of Electrical & Electronic Engineering, Khulna University of Engineering and Technology (KUET)

2. Graduate School of Engineering, University of Fukui

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://www.jstage.jst.go.jp/article/transele/E95.C/2/E95.C_2_255/_pdf

Reference26 articles.

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3. [3] R.P. Sarzala and W. Nakwaski, “GaInNAsSb/GaNAs quantum-well VCSELs: Modeling and physical analysis in the 1.50-1.55µm wavelength range,” J. Appl. Phys., vol.101, no.7, pp.073103-073107, April 2007.

4. [4] E.T. Yu, S.L. Zuo, W.G. Bi, C.W. Tu, A.A. Allerman, and R.M. Biefeld, “Nanometer-scale compositional structure in III-V semiconductor heterostructures characterized by scanning tunneling microscopy,” J. Vac. Sci. Technol. A, vol.17, no.4, pp.2246-2250, July 1999.

5. [5] S.R. Bank, H. Bae, L.L. Goddard, H.B. Yuen, M.A. Wistey, R. Kudrawiec, and J.S. Harris, “Recent progress on 1.55-µm dilute-nitride lasers,” IEEE J. Quantum Electron., vol.43, no.9, Sept. 2007.

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