Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

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Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy

Published:2020-01-15 Issue:3 Volume:20 Page:1415-1421
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Bhuiyan Ashraful G.¹^ORCID,Ishimaru Daiki²,Hashimoto Akihiro²

Affiliation:

1. Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology (KUET), Khulna 9203, Bangladesh

2. Graduate School of Electrical & Electronics Engineering, University of Fukui, Bunkyo 3-9-1, Fukui 910-8507, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.9b00699

Reference37 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. When group-III nitrides go infrared: New properties and perspectives

3. Recent advances in the MOVPE growth of indium nitride

4. Band Gap of Hexagonal InN and InGaN Alloys

5. Band gaps of InN and group III nitride alloys

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1. The band structure of a chain of periodically ordered different quantum dots;Physica B: Condensed Matter;2024-10

2. Theoretical Study on Epitaxial Growthof High-Quality III-Nitride on Graphene;2024 6th International Conference on Electrical Engineering and Information & Communication Technology (ICEEICT);2024-05-02

3. Built-in electric field and hydrostatic pressure effects on exciton states in a wurtzite (In,Ga)N/GaN coupled double quantum well;Journal of the Korean Physical Society;2023-08-02

4. Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2023-07-10

5. Thermal decomposition of trimethylindium and indium trisguanidinate precursors for InN growth: An ab initio and kinetic modeling study;The Journal of Chemical Physics;2023-05-05

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