Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction-Reference-Cited by-同舟云学术

Nitrogen incorporation into strained (In, Ga) (As, N) thin films grown on (100), (511), (411), (311), and (111) GaAs substrates studied by photoreflectance spectroscopy and high-resolution x-ray diffraction

Published:2006-11 Issue:9 Volume:100 Page:093522
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Ibáñez J.,Kudrawiec R.,Misiewicz J.,Schmidbauer M.,Henini M.,Hopkinson M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2374669

Reference24 articles.

1. Comparison between dilute nitrides grown on {111} and (100) GaAs substrates: N incorporation and quantum well optical properties

2. Quantum wells of dilute nitrides grown on GaAs by molecular beam epitaxy

3. Effect of nitrogen on the optical properties of InGaAsN p-i-n structures grown on misoriented (111)B GaAs substrates

4. Structural and optical quality of InGaAsN quantum wells grown on misoriented GaAs (111)b substrates by molecular beam epitaxy

5. Electronic structure of [001]- and [111]-growth-axis semiconductor superlattices

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