Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy

Author:

Cabrera-Montealvo J.J.,Espinosa-Vega L.I.,Hernández-Gaytán L.M.,Mercado-Ornelas C.A.,Perea-Parrales F.E.ORCID,Belio-Manzano A.,Yee-Rendón C.M.ORCID,Rodríguez A.G.,Méndez-García V.H.ORCID,Cortes-Mestizo I.E.ORCID

Funder

CONACYT

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference44 articles.

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5. Electron mobility calculation of diluted III–V-nitrides alloys;Chakir;Semiconductors,2019

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