Strain and annealing temperature effects on the optical properties of GaNAs layers grown by molecular beam epitaxy
Author:
Funder
CONACYT
Publisher
Elsevier BV
Subject
Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials
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1. Phonon Characteristics of Gas-Source Molecular Beam Epitaxy-Grown InAs1−xNx/InP (001) with Identification of Si, Mg and C Impurities in InAs and InN;Crystals;2023-10-17
2. Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy;Journal of Materials Science: Materials in Electronics;2023-03
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