Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy-Reference-Cited by-同舟云学术

Optical analysis of tin-doped GaNAs layers grown on GaAs by molecular beam epitaxy

Published:2023-03 Issue:9 Volume:34 Page:
ISSN:0957-4522
Container-title:Journal of Materials Science: Materials in Electronics
language:en
Short-container-title:J Mater Sci: Mater Electron

Author:

Villarreal-Faz M.,Meza-Reyes P. G.,Belio-Manzano A.,Hernández-Gaytán L. M.,Mercado-Ornelas C. A.,Perea-Parrales F. E.,Olvera-Enríquez J. P.,Espinosa-Vega L. I.,Rodríguez A. G.,Yee-Rendón C. M.,Méndez-García V. H.,Cortes-Mestizo I. E.^ORCID

Funder

Consejo Potosino de Ciencia y Tecnología

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s10854-023-10195-2.pdf

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