Intrinsic limits on electron mobility in dilute nitride semiconductors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1622444
Reference16 articles.
1. Red Shift of Photoluminescence and Absorption in Dilute GaAsN Alloy Layers
2. Development of InGaAsN-based 1.3 m VCSELs
3. III N V semiconductors for solar photovoltaic applications
4. Band Anticrossing in GaInNAs Alloys
5. Theory of electronic structure evolution in GaAsN and GaPN alloys
Cited by 93 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Band dispersion, scattering rate, and carrier mobility using the poles of Green’s function for dilute nitride alloys;Journal of Applied Physics;2024-01-28
2. Temperature-dependent electron Hall mobility in LPE-grown InPBi/InP epilayers;Journal of Materials Science: Materials in Electronics;2023-02
3. Raman scattering study on dilute nitride-bismide GaNAsBi alloys: behavior of photo-excited LO phonon-plasmon coupled mode;Japanese Journal of Applied Physics;2023-01-01
4. Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions;Applied Physics Letters;2022-11-07
5. Compensation effects on hole transport in C-doped p-type GaPN dilute nitrides;AIP Advances;2021-03-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3