Theory of electronic structure evolution in GaAsN and GaPN alloys
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.64.115208/fulltext
Reference106 articles.
1. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
2. Isoelectronic Traps Due to Nitrogen in Gallium Phosphide
3. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
4. Photocurrent of 1eV GaInNAs lattice-matched to GaAs
5. Acceptorlike ExcitedSStates of Excitons Bound to Nitrogen Pairs in GaP
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