Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy-Reference-Cited by-同舟云学术

Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy

Published:2010-12 Issue:2-3 Volume:124 Page:1126-1133
ISSN:0254-0584
Container-title:Materials Chemistry and Physics
language:en
Short-container-title:Materials Chemistry and Physics

Author:

Chan C.H.,Wu J.D.,Huang Y.S.,Hsu H.P.,Tiong K.K.,Su Y.K.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science

Reference29 articles.

1. High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm

2. (In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm

3. 1.3 μm room-temperature GaAs-based quantum-dot laser

4. Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well

5. Low-threshold current, high-efficiency 1.3-μm wavelength aluminum-free InGaAsN-based quantum-well lasers

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