(In)GaAsN-based type-II “W” quantum-well lasers for emission at λ=1.55 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1616193
Reference22 articles.
1. Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL
2. Single transverse mode operation of 1.55-μm buried heterostructure vertical-cavity surface-emitting lasers
3. Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers
4. Room temperature continuous wave InGaAsN quantum well vertical-cavity lasers emitting at 1.3 [micro sign]m
5. Room-temperature operation of GaInAsN-GaAs laser diodes in the 1.5-μm range
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