Structural and optical characteristics of ∼ 1.65 μm-emitting quantum dots on InP substrate grown by selected area-MOVPE-Reference-Cited by-同舟云学术

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Structural and optical characteristics of ∼ 1.65 μm-emitting quantum dots on InP substrate grown by selected area-MOVPE

Published:2024-02 Issue: Volume:627 Page:127519
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pokharel Nikhil^ORCID,Liu Cheng^ORCID,Betancourt Ponce Miguel A.,Kirch Jeremy,Xu Shining^ORCID,Kvit Alexander,Gopalan Padma^ORCID,Mawst Luke^ORCID

Funder

Army Research Office

University of Wisconsin-Madison

Materials Research Science and Engineering Center, Harvard University

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Gain and the threshold of three-dimensional quantum-box lasers;Asada;IEEE J. Quantum Electron.,1986

2. Multidimensional quantum well laser and temperature dependence of its threshold current;Arakawa;Appl. Phys. Lett.,1982

3. Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain;Vahala;IEEE J. Quantum Electron.,1988

4. J. Heydenreich, Low threshold, large To injection laser emission from (InGa)As quantum dots, Electron Lett, vol. 30, no. 17, pp. 1416-1417(1), Aug. 1994, [Online]. Available: https://digital-library.theiet.org/content/journals/10.1049/el_19940939.

5. Y. Suematsu, Lasing action of Ga0.67In0.33As/GaInAsP/InP tensile-strained quantum-box laser, Electron Lett, vol. 30, no. 2, pp. 142-143(1), Jan. 1994, [Online]. Available: https://digital-library.theiet.org/content/journals/10.1049/el_19940082.

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