Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1489716
Reference24 articles.
1. Electronic Properties of Ga(In)NAs Alloys
2. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
3. GaInNAs: a novel material for long-wavelength semiconductor lasers
4. GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes
5. A 1.3-µm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
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1. Carrier Transfer of Deep‐Level Localized States in Type‐II In x Ga 1− x As/GaN y As 1− y Short‐Period Superlattice;physica status solidi (b);2019-10-03
2. Characterization of III-V dilute nitride based multi-quantum well p-i-n diodes for next generation opto-electrical conversion devices;Materials Today: Proceedings;2019
3. Solution processed vertically stacked ZnO sheet-like nanorod p–n homojunctions and their application as UV photodetectors;Journal of Materials Chemistry C;2016
4. Thermal quenching of photoluminescence in Ga(AsBi);Journal of Applied Physics;2015-01-14
5. Characterizations of GaInNAs/GaAs quantum wells;SPIE Proceedings;2013-07-25
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