Thermal quenching of photoluminescence in Ga(AsBi)
Author:
Affiliation:
1. Department of Physics and Material Sciences Center, Philipps-University of Marburg, Renthof 5, 35032 Marburg, Germany
Funder
European Union
German Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4905687
Reference28 articles.
1. GaN1−xBix: Extremely mismatched semiconductor alloys
2. Shallow-terrace-like interface in dilute-bismuth GaSb/AlGaSb single quantum wells evidenced by photoluminescence
3. Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
4. The effect of Bi composition on the properties of InP1−xBix grown by liquid phase epitaxy
5. GaBiAs: A material for optoelectronic terahertz devices
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