Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4826621
Reference37 articles.
1. Band gap of GaAs1−xBix, 0
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4. Carrier–phonon coupling in GaAs1−xBix/GaAs quantum wells
5. Luminescence dynamics in Ga(AsBi)
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1. Theoretical Study of Spontaneous Emission Spectra in GaAsBi/GaAs Quantum Wells;Journal of Nanoelectronics and Optoelectronics;2023-07-01
2. Effect of bismuth incorporation on recombination mechanisms in GaAsBi/GaAs heterostructures;Journal of Materials Science: Materials in Electronics;2023-02
3. Structural and optical properties of n-type and p-type GaAs(1−x)Bi x thin films grown by molecular beam epitaxy on (311)B GaAs substrates;Semiconductor Science and Technology;2021-06-21
4. Energy Scaling of Compositional Disorder in Ternary Transition‐Metal Dichalcogenide Monolayers;Advanced Electronic Materials;2021-05-19
5. Comparison of carrier-recombination in Ga(As,Bi)/Ga(N,As)-type-II quantum wells and W-type heterostructures;Applied Physics Letters;2021-02-01
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