Comparison of carrier-recombination in Ga(As,Bi)/Ga(N,As)-type-II quantum wells and W-type heterostructures-Reference-Cited by-同舟云学术

Comparison of carrier-recombination in Ga(As,Bi)/Ga(N,As)-type-II quantum wells and W-type heterostructures

Published:2021-02-01 Issue:5 Volume:118 Page:052103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Veletas Julian¹^ORCID,Hepp Thilo²^ORCID,Dobener Florian¹,Volz Kerstin²,Chatterjee Sangam¹^ORCID

Affiliation:

1. Institute of Experimental Physics I and Center for Materials Research, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, Germany

2. Faculty of Physics and Materials Sciences Center, Philipps-Universität Marburg, Hans-Meerwein-Str. 6, 35035 Marburg, Germany

Funder

Deutsche Forschungsgemeinschaft

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0036073

Reference35 articles.

1. Intervalence band absorption in semiconductor laser materials

2. Dependence of Threshold Current on QW Position and on Pressure in 1.5 ?m InGaAs(P) Lasers

3. Theoretical study of Auger recombination in a GaInNAs 1.3 μm quantum well laser structure

4. Mechanism of suppression of Auger recombination processes in type‐II heterostructures

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