Author:
Davidson Zoe C. M.,Rorison Judy M.,Sweeney Stephen J.,Broderick Christopher A.
Abstract
We theoretically analyse strain-compensated GaAs1
−x
Bi
x
/GaN
y
As1
−y
“W-type” quantum wells, demonstrating a viable approach to achieve efficient GaAs-based 1.3 and 1.55 µm lasers in which non-radiative Auger recombination is expected to be mitigated by type-II band offsets.