GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics-Reference-Cited by-同舟云学术

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

Published:2017-04-19 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Broderick Christopher A.,Jin Shirong,Marko Igor P.,Hild Konstanze,Ludewig Peter,Bushell Zoe L.,Stolz Wolfgang,Rorison Judy M.,O’Reilly Eoin P.,Volz Kerstin,Sweeney Stephen J.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep46371.pdf

Reference63 articles.

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2. Klem, J. F., Blum, O., Kurtz, S. R., Fritz, I. J. & Choquette, K. D. GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates. J. Vac. Sci. Technol. B 18, 1605 (2000).

3. Yeh, J.-Y. et al. Long wavelength emission of InGaAsN/GaAsSb type II “W” quantum wells. Appl. Phys. Lett. 88, 051115 (2006).

4. Berger, C. et al. Novel type-II material system for laser applications in the near-infrared regime. AIP Advances 5, 047105 (2015).

5. Fuchs, C. et al. Electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As single ‘W’-quantum well laser at 1.2 μm. Electron. Lett. 52, 1875 (2016).

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