Electrical injection type‐II (GaIn)As/Ga(AsSb)/(GaIn)As single ‘W’‐quantum well laser at 1.2 µm
Author:
Affiliation:
1. Materials Sciences Center and Department of PhysicsPhilipps‐Universität MarburgRenthof 535032MarburgGermany
2. Nonlinear Control Strategies Inc.7040 N Montecatina DriveTucsonAZ85704USA
Funder
Air Force Office of Scientific Research
Deutsche Forschungsgemeinschaft
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2016.2851
Reference10 articles.
1. Enabling optical communication
2. Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells
3. Mechanism of suppression of Auger recombination processes in type‐II heterostructures
4. GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates
5. Emission properties of heterostructures with a (GaAsSb-InGaAs)/GaAs bilayer quantum well
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