Room temperature laser emission of (Ga,In)(N,As)/Ga(As,Sb)/(Ga,In)(N,As) type‐II ‘W’ quantum well heterostructures
Author:
Affiliation:
1. Department of Physics Materials Sciences Center Philipps‐Universität Marburg Marburg Germany
2. Department of Chemistry and Materials Sciences Center Philipps‐Universität Marburg Marburg Germany
3. NAsP III/V GmbH Marburg Germany
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/ell2.12427
Reference18 articles.
1. The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers
2. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
3. MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications
4. Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm
5. High performance GaAsSb∕GaAs quantum well lasers
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