MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications
Author:
Funder
Deutsche Forschungsgemeinschaft (DFG)
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference21 articles.
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3. Auger coefficients in type-II InAs/Ga1−xInxSb quantum wells;Meyer;Appl. Phys. Lett.,1998
4. Mechanism of suppression of Auger recombination processes in type‐II heterostructures;Zegrya;Appl. Phys. Lett.,1995
5. Realization and modeling of a pseudomorphic (GaAs1−xSbx–InyGa1−yAs)/GaAs bilayer-quantum well;Peter;Appl. Phys. Lett.,1995
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