Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215–1233 nm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1581978
Reference19 articles.
1. Role of p-doping profile and regrowth on the static characteristics of 1.3-μm MQW InGaAsP-InP lasers: experiment and modeling
2. GaInNAs: a novel material for long-wavelength semiconductor lasers
3. Tunable long-wavelength vertical-cavity lasers: the engine of next generation optical networks?
4. Low Threshold and High Characteristic Temperature 1.3 µm Range GaInNAs Lasers Grown by Metalorganic Chemical Vapor Deposition
5. 8 W continuous wave operation of InGaAsN lasers at 1.3 [micro sign]m
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1. Photoreflectance studies of the band gap alignments in boron diluted BGaInAs/GaAs quantum wells;Optical Materials Express;2022-07-20
2. Dilute-As InGaNAs/GaN Quantum Wells for High-Efficiency Red Emitters;IEEE Journal of Quantum Electronics;2022-04
3. Effect of growth interruption on Ga(N, As)/Ga(As, Sb)/Ga(N, As) type-II-“W” quantum well heterostructures;Journal of Crystal Growth;2022-03
4. Room temperature laser emission of (Ga,In)(N,As)/Ga(As,Sb)/(Ga,In)(N,As) type‐II ‘W’ quantum well heterostructures;Electronics Letters;2022-01-26
5. Thermal energy effect on optoelectronic characteristics of InGaAsN/GaAs laser diode under the variation of quantum well number;Thermal Science;2022
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