Affiliation:
1. Department of Physics, King Abdulaziz University, Jeddah, Saudi Arabia
Abstract
A laser device based on InGaAsN quantum well active regions emitting at 1.26
mm is reported. The performances of the laser under the effect of thermal
energy are investigated in terms of threshold current, Ith, gain parameter,
gt, photon energy, hn, and cavity length, Lc. Four structures with one,
two, and three quantum wells along with a structure that have three quantum
wells with tensile strained barriers are proposed to study the relation
between the peak gain, gpeak, and photon energy. The founds show that
structures with one and two quantum wells operating at room temperature and
under pulse wave condition, exhibit a linear dependence of gpeak on both Lc
and photon energy. It is shown that the threshold current density, Jth,
increases at any temperature with the cavity length Lc ranging from 250 nm
to 1000 nm. Also, the investigation of the proposed structures shows that gt
decreases with increasing temperature, while the ratio of the cur-rent
density parameter to internal efficiency, Jt/hi, per well increases with the
quantum well number. A comparison was carried out for two particular
structures with three quantum wells and GaAsP barriers, the results show a
decrease in the threshold current per well.
Publisher
National Library of Serbia
Subject
Renewable Energy, Sustainability and the Environment
Cited by
1 articles.
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