Novel type-II material system for laser applications in the near-infrared regime-Reference-Cited by-同舟云学术

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Novel type-II material system for laser applications in the near-infrared regime

Published:2015-04 Issue:4 Volume:5 Page:047105
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Berger C.¹,Möller C.¹,Hens P.¹,Fuchs C.¹,Stolz W.¹,Koch S. W.¹,Ruiz Perez A.²,Hader J.³,Moloney J. V.³

Affiliation:

1. Department of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, 35032 Marburg, Germany

2. NAsPIII/V GmbH, Am Knechtacker 19, 35041 Marburg, Germany

3. Nonlinear Control Strategies Inc, 3542 N. Geronimo Ave., Tucson, AZ 85705, USA

Funder

Deutsche Forschungsgemeinschaft (DFG)

Small Business Innovative Research and Small Business Technology Transfer (SBIR/STTR)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/5/4/1.4917180.pdf?itemId=/content/aip/journal/adva/5/4/10.1063/1.4917180&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference23 articles.

1. Enabling optical communication

2. Fiber‐Optic Communication Systems

3. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

4. Vertical-external-cavity semiconductor lasers

5. Passively modelocked surface-emitting semiconductor lasers

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1. Optical Stark effect in type-II semiconductor heterostructures;Physical Review B;2024-02-02

2. High-power and low-threshold 1200 nm InGaAs/GaAs quantum-wells VECSEL grown by MOCVD;Journal of Luminescence;2023-11

3. Modelling of GaAsSb/InAs type-II QW heterostructure and simulation of its optical gain characteristics under (100), (001) and (110) directional pressure;Physica B: Condensed Matter;2023-08

4. Gain recovery dynamics in active type-II semiconductor heterostructures;Applied Physics Letters;2023-02-20

5. Injection- and Temperature-Dependence of Type-II 1.2-1.3 μm (GaIn)As/Ga(AsSb) "W"-Lasers;2021 27th International Semiconductor Laser Conference (ISLC);2021-10-10

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