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Vertical-external-cavity semiconductor lasers

Published:2004-04-15 Issue:9 Volume:37 Page:R75-R85
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Tropper A C,Foreman H D,Garnache A,Wilcox K G,Hoogland S H

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/37/i=9/a=R01/pdf

Reference52 articles.

1. 60-W average power in 810-fs pulses from a thin-disk Yb:YAG laser

2. Scalable high‐power optically pumped GaAs laser

3. High-power (>0.5-W CW) diode-pumped vertical-external-cavity surface-emitting semiconductor lasers with circular TEM/sub 00/ beams

4. High-power diode-pumped AlGaAs surface-emitting laser

5. Diode-pumped broadband vertical-external-cavity surface-emitting semiconductor laser applied to high-sensitivity intracavity absorption spectroscopy

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