Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2171486
Reference13 articles.
1. Low-threshold-current-density 1300-nm dilute-nitride quantum well lasers
2. High power CW operation of InGaAsN lasers at 1.3 [micro sign]m
3. Characteristics of InGaAsN/GaAsN quantum well lasers emitting in the 1.4-μm regime
4. 1.50 [micro sign]m CW operation of GaInNAs∕GaAs laser diodes grown by MOCVD
5. Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in the range 1.28 – 1.38 [micro sign]m
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