1.50 [micro sign]m CW operation of GaInNAs∕GaAs laser diodes grown by MOCVD
Author:
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://digital-library.theiet.org/content/journals/10.1049/el_20045616?crawler=true&mimetype=application/pdf
Reference8 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. High-temperature characteristic in 1.3-/spl mu/m-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition
3. Nitrogen incorporation in (GaIn)(NAs) for 1.3μm VCSEL grown with MOVPE
4. 1.5 [micro sign]m laser on GaAs with GaInNAsSb quinary quantum well
5. Low-threshold CW GaInNAsSb∕GaAs laser at 1.49 [micro sign]m
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