Barrier thickness dependence of MgxZn1−xO/ZnO quantum well (QW) on the performance of a p-NiO/QW/n-ZnO photodiode
Author:
Affiliation:
1. Department of Electrophysics
2. National Chiayi University
3. Chiayi City 60004
4. Taiwan
Abstract
An MgxZn1−xO/ZnO quantum well (QW) structure, with various barrier (MgxZn1−xO layer) thicknesses, was inserted into p-NiO/n-ZnO heterojunction photodiodes (HPDs) by using a radio-frequency magnetron sputtering system.
Funder
Ministry of Science and Technology, Taiwan
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA06131B
Reference68 articles.
1. Ultraviolet photodiode based on p-Mg0.2Zn0.8O/n-ZnO heterojunction with wide response range
2. ZnO-Based Solar Blind Ultraviolet-B Photodetectors Using MgZnO Absorption Layer
3. Enhanced Ultraviolet Response of ${\rm p}\hbox{-}{\rm Si}/{\rm SiO}_{x}/{\rm i}\hbox{-}{\rm ZnO}/{\rm n}\hbox{-}{\rm ZnO}$ Photodetectors
4. Back-to-back symmetric Schottky type UVA photodetector based on ternary alloy BeZnO
5. ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed
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