Carrier–phonon coupling in GaAs1−xBix/GaAs quantum wells-Reference-Cited by-同舟云学术

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Carrier–phonon coupling in GaAs1−xBix/GaAs quantum wells

Published:2012-06-27 Issue:8 Volume:27 Page:085012
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Chernikov A,Bornwasser V,Koch M,Koch S W,Lu X,Johnson S R,Beaton D A,Tiedje T,Chatterjee S

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Characteristics of Semiconductor Alloy GaAs1-xBix

2. Band gap of GaAs1−xBix, 0

3. Structural investigation of GaAs1−xBix/GaAs multiquantum wells

4. Giant Spin-Orbit Bowing inGaAs1−xBix

5. Similar and dissimilar aspects ofIII−Vsemiconductors containingBiversusN

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of thermal annealing on the optical and structural properties of (311)B and (001) GaAsBi/GaAs single quantum wells grown by MBE;Journal of Applied Physics;2020-03-31

2. Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells;Journal of Applied Physics;2013-10-28

3. Carrier relaxation dynamics in a Ga(AsBi) single quantum well under high-intensity excitation conditions;physica status solidi (c);2013-05-31

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