Luminescence dynamics in Ga(AsBi)-Reference-Cited by-同舟云学术

Luminescence dynamics in Ga(AsBi)

Published:2011-04-18 Issue:16 Volume:98 Page:161104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Imhof Sebastian,Wagner Christian,Thränhardt Angela,Chernikov Alexej,Koch Martin,Köster Niko S.,Chatterjee Sangam,Koch Stephan W.,Rubel Oleg,Lu Xianfeng,Johnson Shane R.,Beaton Daniel A.,Tiedje Thomas

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3580773

Reference19 articles.

1. Molecular beam epitaxy growth of GaAs1−xBix

2. Band gap of GaAs1−xBix, 0

3. Molecular-beam epitaxy and characteristics of GaNyAs1−x−yBix

4. Microscopic theory of the optical properties of Ga(AsBi)/GaAs quantum wells

5. Valence-band anticrossing in mismatched III-V semiconductor alloys

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