The effect of Bi composition on the properties of InP1−xBix grown by liquid phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4873640
Reference31 articles.
1. Band gap of GaAs1−xBix, 0
2. Molecular beam epitaxy growth of GaAs1−xBix
3. Valence band anticrossing in GaBixAs1−x
4. Unusual broadening of E0 and E0 + ΔSO transitions in GaAsBi studied by electromodulation spectroscopy
5. Giant Spin-Orbit Bowing inGaAs1−xBix
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1. Electronic properties of InBixP1-x alloy in the P-rich range calculated using first-principles calculations;Journal of Physics and Chemistry of Solids;2023-10
2. Structural, Electronic and Optical Properties of the Ordered InP1 – xBix: An Ab-Initio Study;Russian Journal of Physical Chemistry B;2023-08
3. Temperature-dependent electron Hall mobility in LPE-grown InPBi/InP epilayers;Journal of Materials Science: Materials in Electronics;2023-02
4. Density functional theory study of quaternary InPBiN alloys lattice matched to InP substrate: Structural, electronic and optical properties;Optik;2022-07
5. Growth of dilute quaternary alloy InPNBi and its′ characterization;Journal of Crystal Growth;2020-04
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