Unusual broadening of E0 and E0 + ΔSO transitions in GaAsBi studied by electromodulation spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3692763
Reference15 articles.
1. New Semiconductor Alloy GaAs1-xBix Grown by Metal Organic Vapor Phase Epitaxy
2. Temperature Dependence of GaAs1-xBixBand Gap Studied by Photoreflectance Spectroscopy
3. Molecular beam epitaxy growth of GaAs1−xBix
4. Band gap of GaAs1−xBix, 0
5. Giant Spin-Orbit Bowing inGaAs1−xBix
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1. Structural, Electronic and Optical Properties of the Ordered InP1 – xBix: An Ab-Initio Study;Russian Journal of Physical Chemistry B;2023-08
2. First-principles investigation on narrow bandgap InSb1−Bi dilute bismide alloys for highly efficient long-wavelength infrared optoelectronics;Infrared Physics & Technology;2022-09
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4. Photoreflectance and photoreflectance excitation study of optical transitions in GaAsBi/GaAs heterostructure;Journal of Applied Physics;2018-01-21
5. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application;Crystals;2017-02-24
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