Thermal processes contributions to the temperature dependence of the energy gap in dilute bismuth III-V alloys-Reference-Cited by-同舟云学术

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Thermal processes contributions to the temperature dependence of the energy gap in dilute bismuth III-V alloys

Published:2022-02 Issue: Volume:343 Page:114649
ISSN:0038-1098
Container-title:Solid State Communications
language:en
Short-container-title:Solid State Communications

Author:

Zouaghi S.,Fitouri H.,Rebey A.

Funder

Ministry of Higher Education and Scientific Research

University of Monastir

Publisher

Elsevier BV

Subject

Materials Chemistry,Condensed Matter Physics,General Chemistry

Reference72 articles.

1. Characteristics of Semiconductor Alloy GaAs1-xBix

2. Band gap of GaAs1−xBix, 0

3. Growth and properties of GaSbBi alloys

4. Bismuth-containing compounds, springer series in material;Song;Science,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The roles of Bi in InAs and InAsBi nanostructure growth;Journal of Materials Chemistry C;2024

2. First-principles investigation on narrow bandgap InSb1−Bi dilute bismide alloys for highly efficient long-wavelength infrared optoelectronics;Infrared Physics & Technology;2022-09

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