Nitrogen-activated bowing of dilute In[sub y]Ga[sub 1−y]As[sub 1−x]N[sub x] based on photoreflectance studies-Reference-Cited by-同舟云学术

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Nitrogen-activated bowing of dilute In[sub y]Ga[sub 1−y]As[sub 1−x]N[sub x] based on photoreflectance studies

Published:2003 Issue:12 Volume:94 Page:7576
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Fahmi M. M. E.,Khan Arif,Griffin J. A.,Harris G. L.,Robins Lawrence H.,Birdwell A. G.,Kang Youn-Seon,Smith David J.,Steiner Todd,Mohammad S. Noor

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference27 articles.

1. Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

2. Bowing parameter of the band-gap energy of GaNxAs1−x

3. InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs

4. Band gaps of lattice-matched (Ga,In)(As,N) alloys

5. Enhanced optical and structural properties of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependence of the optical transitions in Ga0.64In0.36N0.046As0.954 multiquantum wells of various widths studied by photoreflectance;Journal of Applied Physics;2009-08

2. Novel chemical-vapor deposition technique for the synthesis of high-quality single-crystal nanowires and nanotubes;The Journal of Chemical Physics;2006-02-14

3. Photo- and Electro-reflectance of III–V-N Compounds and Low Dimensional Structures;Dilute Nitride Semiconductors;2005

4. Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs∕GaAs single quantum well structures;Journal of Applied Physics;2004-12

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